Infineon Applied sciences AG has cooperated with FOXESS, a widely known firm within the subject of inexperienced power, to collectively enhance the effectivity and energy density of power storage purposes. Infineon will provide its superior energy semiconductor parts to FOXESS to advertise the event of revolutionary options for the inexperienced power business.
Particularly, Infineon will present FOXESS with CoolSiC MOSFET 1200 V and EiceDRIVER gate drivers for industrial power storage purposes. As well as, FOXESS’s string photovoltaic inverters will use Infineon’s IGBT7 H7 1200 V energy semiconductor gadgets.
FOXESS’s H3PRO power storage collection makes use of Infineon’s CoolSiC MOSFET 1200 V.
As the worldwide photovoltaic power storage system (PV-ES) market continues to quickly develop, rising energy density has turn out to be the important thing to success. Infineon’s energy semiconductor gadgets, together with the CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V collection, function state-of-the-art semiconductor know-how tailor-made for industrial purposes and meet the rising calls for for effectivity and energy density in power storage purposes. .
gents.Yu Daihui, Senior Vice President and Head of Trade and Infrastructure of Infineon Applied sciences Higher Chinais proud to accomplice with FOXESS to drive decarbonization by increased energy density and extra dependable PV-ES software methods.
FOXESS’s R collection makes use of Infineon’s IGBT7 H7 collection, redefining the general design of the 100 kW mannequin.
gents.Zhu Jingcheng, Chairman of FOXESS, highlighted the numerous enhancements in product reliability and effectivity achieved by the assist of Infineon’s superior parts. He emphasised that Infineon’s technical experience and product high quality are key components in enhancing FOXESS’s competitiveness and market share.
Infineon’s CoolSiC MOSFET 1200 V has a excessive energy density that reduces losses by 50% and offers further power with out rising the battery measurement. FOXESS’s H3PRO 15 kW-30 kW power storage collection geared up with Infineon’s CoolSiC MOSFETs has achieved important effectivity and gross sales development in world markets.
Likewise, Infineon’s TRENCHSTOP IGBT7 H7 650 V/1200 V collection enhances the general effectivity and energy density of the inverter. By leveraging Infineon’s superior energy semiconductor gadgets, FOXESS has optimized the design of the R-Sequence 75-110 kW industrial and industrial fashions, reaching excellent efficiencies of as much as 98.6%.
Infineon presents a full vary of EiceDRIVER gate drivers, guaranteeing good integration with all energy parts (together with CoolSiC and IGBT), simplifying the design course of and enhancing system reliability.
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